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Kristallwachstum - Wachstum von Galliumphosphid-Whiskern

Formal Metadata

Title
Kristallwachstum - Wachstum von Galliumphosphid-Whiskern
Alternative Title
Crystal Growth - Growth of GaP-Whiskers
Author
License
CC Attribution - NonCommercial - NoDerivatives 3.0 Germany:
You are free to use, copy, distribute and transmit the work or content in unchanged form for any legal and non-commercial purpose as long as the work is attributed to the author in the manner specified by the author or licensor.
Identifiers
IWF SignatureE 1890
Publisher
Release Date
Language
Producer
Production Year1971

Technical Metadata

IWF Technical DataFilm, 16 mm, 85 m ; SW, 8 min

Content Metadata

Subject Area
Genre
Abstract
German
German
Entstehung und Wachstum der Whisker durch Überleiten von nassem Wasserstoff über GaP bzw. Ga-Ausgangsmaterial bei 1100°C. Wachstumsunterbrechung durch Ga-Tröpfchen an den Whiskerspitzen, Bildung von Verwachsungen und Verzweigungen, Strecken geknickter oder gekrümmter Whisker. Zeitraffung.
English
English
The film shows the growth of GaP whiskers which are obtained in the temperature range of 900 to 1050° C when wet hydrogen is passed ove GaP and Ga materials of about 1100° C. One can see in detail the termination of whisker growth when Ga droplets appear on the whisker tips, the encapsulation of a Ga droplet by a GaP layer, the approach, fusion and common growth of two intersecting whiskers, the branching of whiskers, and the straightening of initially bent or kinked whiskers.
Keywords
German
German
English
English
IWF Classification
German
German
English
English