Kristallwachstum - Wachstum von Galliumphosphid-Whiskern

Video in TIB AV-Portal: Kristallwachstum - Wachstum von Galliumphosphid-Whiskern

Formal Metadata

Title
Kristallwachstum - Wachstum von Galliumphosphid-Whiskern
Alternative Title
Crystal Growth - Growth of GaP-Whiskers
Author
License
CC Attribution - NonCommercial - NoDerivatives 3.0 Germany:
You are free to use, copy, distribute and transmit the work or content in unchanged form for any legal and non-commercial purpose as long as the work is attributed to the author in the manner specified by the author or licensor.
Identifiers
IWF Signature
E 1890
Publisher
Release Date
1972
Language
Silent film
Producer
Erich Schönherr
Production Year
1971

Technical Metadata

IWF Technical Data
Film, 16 mm, 85 m ; SW, 8 min

Content Metadata

Subject Area
Abstract
Entstehung und Wachstum der Whisker durch Überleiten von nassem Wasserstoff über GaP bzw. Ga-Ausgangsmaterial bei 1100°C. Wachstumsunterbrechung durch Ga-Tröpfchen an den Whiskerspitzen, Bildung von Verwachsungen und Verzweigungen, Strecken geknickter oder gekrümmter Whisker. Zeitraffung.
The film shows the growth of GaP whiskers which are obtained in the temperature range of 900 to 1050° C when wet hydrogen is passed ove GaP and Ga materials of about 1100° C. One can see in detail the termination of whisker growth when Ga droplets appear on the whisker tips, the encapsulation of a Ga droplet by a GaP layer, the approach, fusion and common growth of two intersecting whiskers, the branching of whiskers, and the straightening of initially bent or kinked whiskers.
Keywords Whisker / Galliumphosphid Galliumphosphid / Whisker Kristallwachstum / Galliumphosphid-Whisker Galliumphosphid / Feingefüge crystal growth / GaP whiskers GaP / whiskers gallium phosphide / whisker whisker / GaP

Related Material

Video is accompanying material for the following resource
Whisker (metallurgy) Gallium phosphide Temperature
Strecken
Institut für Physik Graz
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