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Modification of semiconductor or metal nanoparticle lattices in amorphous alumina by MeV heavy ions

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Modification of semiconductor or metal nanoparticle lattices in amorphous alumina by MeV heavy ions
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51
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In the present work we investigate effects of MeV heavy ions (from 0.4 MeV Xe to 15 MeV Si) on regularly ordered nanoparticle (NP) lattices embedded in amorphous alumina matrix. These nanostructures were produced by self-assembling growth using magnetron-sputtering deposition. From grazing incidence small-angle x-ray scattering measurements we have found that the used MeV heavy ions do not change the NP sizes, shapes or distances among them. However, ions cause a tilt of the entire NP lattice in the direction parallel to the surface. The tilt angle depends on the incident ion energy, type and the applied fluence and a nearly linear increase of the tilt angle with the ion fluence and irradiation angle was found. This way, MeV heavy ion irradiation can be used to design custom-made NP lattices. In addition, grazing incidence small-angle x-ray scattering can be effectively used as a method for the determination of material redistribution/shift caused by the ion hammering effect. For the first time, the deformation yield in amorphous alumina was determined for irradiation performed at the room temperature.
Amorphous solidMetalSemiconductorElectric power distributionPlain bearingParticle physicsVideoAutumnAmorphous solidMatrix (printing)Ion
IonAmorphous solidMatrix (printing)Order and disorder (physics)Angle of attackRadiationX-rayIonEffects unitLattice constantBestrahlungsstärkeDiagram
Matrix (printing)Lattice constant
Parking meterPulsarComputer animation
Substrate (printing)Assembly lineMagnetronThin filmMatrix (printing)MagnetronThin filmTARGET2BestrahlungsstärkeOrder and disorder (physics)Program flowchart
IonThermalAnalytical mechanicsContinuous trackTemperatureHeatModel buildingTrajectoryTransfer functionIndustrieelektronikElectronTypesettingSeparation processMaterialBrickyardSwitcherComputer animation
MapAngle of attackSpeckle imagingRadiationMercury switchDurchstrahlungselektronenmikroskopieCrystal structureIonBestrahlungsstärkeComputer animation
Superheterodyne receiverDurchstrahlungselektronenmikroskopieSpeckle imagingBestrahlungsstärkeSubstrate (printing)LaserSeries and parallel circuitsMap
Amorphous solidIonBestrahlungsstärkeSeries and parallel circuitsSizingMapDirect currentMatrix (printing)
Matrix (printing)Amorphous solidMercury switchIonInitiator <Steuerungstechnik>BestrahlungsstärkeMarker penRadiationTypesettingSeparation process
BauxitbergbauAngle of attackMercury switchMercury switchBestrahlungsstärkeAngle of attackIon beamDiagram
Angle of attackEffects unitAmorphous solidNetztransformatorPower (physics)IonSchwellenspannungMaterialRadiationFirearmPenRedshiftPolradCartridge (firearms)Matrix (printing)SapphireDampfbügeleisenScoutingMercury switchFluenceAngle of attackBestrahlungsstärkeIon trackFormation flyingDiagram
Transcript: English(auto-generated)