We're sorry but this page doesn't work properly without JavaScript enabled. Please enable it to continue.
Feedback

Spannungsrisstrennen von mono- und polykristallinem Silizium

00:00

Formal Metadata

Title
Spannungsrisstrennen von mono- und polykristallinem Silizium
Alternative Title
fast laser induced separation of silicon wafer materials
Author
Contributors
License
CC Attribution - NonCommercial 3.0 Germany:
You are free to use, adapt and copy, distribute and transmit the work or content in adapted or unchanged form for any legal and non-commercial purpose as long as the work is attributed to the author in the manner specified by the author or licensor.
Identifiers
Publisher
Release Date
Language
Producer
Production PlaceLabor 6 - Laserinstitut Hochschule Mittweida

Content Metadata

Subject Area
Genre
Abstract
German
German
Spannungsrisstrennen von mono- und polykristallinem Silizium Schritt 1: Anritzen des Siliziumwafers Schritt 2: Trennprozess mit defokussiertem Laserstrahl ausgehend vom Anriss (schmelzfrei, ohne Ablation, Scangeschwindigkeit im Video 1 m/s, ansonsten bis 15 m/s)
English
English
fast laser induced separation of silicon wafer materials
Keywords
German
German
English
English