Spannungsrisstrennen von mono- und polykristallinem Silizium

Video in TIB AV-Portal: Spannungsrisstrennen von mono- und polykristallinem Silizium

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Formal Metadata

Title
Spannungsrisstrennen von mono- und polykristallinem Silizium
Alternative Title
fast laser induced separation of silicon wafer materials
Author
Weinhold, Sebastian
Contributors
Weinhold, Sebastian
License
CC Attribution - NonCommercial 3.0 Germany:
You are free to use, adapt and copy, distribute and transmit the work or content in adapted or unchanged form for any legal and non-commercial purpose as long as the work is attributed to the author in the manner specified by the author or licensor.
Identifiers
Publisher
Laserinstitut Hochschule Mittweida
Release Date
2014
Language
Silent film
Producer
Weinhold, Sebastian
Production Place
Labor 6 - Laserinstitut Hochschule Mittweida

Content Metadata

Subject Area
Abstract
Spannungsrisstrennen von mono- und polykristallinem Silizium Schritt 1: Anritzen des Siliziumwafers Schritt 2: Trennprozess mit defokussiertem Laserstrahl ausgehend vom Anriss (schmelzfrei, ohne Ablation, Scangeschwindigkeit im Video 1 m/s, ansonsten bis 15 m/s)
fast laser induced separation of silicon wafer materials
Keywords
Silicon
Spannungsrisstrennen
Silizium
Mittweida
Laserinstitut
LHM
Laser
Laser induced cutting
High speed Laser
Laser processing
Laser manufacturing
Siliziumwafer
Silicon wafer
Computer animation
Computer animation
Computer animation
Computer animation
Computer animation
Computer animation Wafer (electronics)
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Timings

  331 ms - page object

Version

AV-Portal 3.12.0 (3a2599d676b25753609baac9def5622401886a53)
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