Spannungsrisstrennen von mono- und polykristallinem Silizium
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| Title | Spannungsrisstrennen von mono- und polykristallinem Silizium |
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| Alternative Title | fast laser induced separation of silicon wafer materials |
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| License | You are free to use, adapt and copy, distribute and transmit the work or content in adapted or unchanged form for any legal and non-commercial purpose as long as the work is attributed to the author in the manner specified by the author or licensor. |
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| Production Place | Labor 6 - Laserinstitut Hochschule Mittweida |
Content Metadata
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| Abstract | | German | German Spannungsrisstrennen von mono- und polykristallinem Silizium
Schritt 1: Anritzen des Siliziumwafers
Schritt 2: Trennprozess mit defokussiertem Laserstrahl ausgehend vom Anriss (schmelzfrei, ohne Ablation, Scangeschwindigkeit im Video 1 m/s, ansonsten bis 15 m/s) | | English | English fast laser induced separation of silicon wafer materials |
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| Keywords | | German | German | | English | English |
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