Spannungsrisstrennen von mono- und polykristallinem Silizium

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Video in TIB AV-Portal: Spannungsrisstrennen von mono- und polykristallinem Silizium

Formal Metadata

Title
Spannungsrisstrennen von mono- und polykristallinem Silizium
Alternative Title
fast laser induced separation of silicon wafer materials
Author
Contributors
License
CC Attribution - NonCommercial 3.0 Germany:
You are free to use, adapt and copy, distribute and transmit the work or content in adapted or unchanged form for any legal and non-commercial purpose as long as the work is attributed to the author in the manner specified by the author or licensor.
Identifiers
Publisher
Release Date
2014
Language
Silent film
Producer
Weinhold, Sebastian
Production Place
Labor 6 - Laserinstitut Hochschule Mittweida

Content Metadata

Subject Area
Abstract
Spannungsrisstrennen von mono- und polykristallinem Silizium Schritt 1: Anritzen des Siliziumwafers Schritt 2: Trennprozess mit defokussiertem Laserstrahl ausgehend vom Anriss (schmelzfrei, ohne Ablation, Scangeschwindigkeit im Video 1 m/s, ansonsten bis 15 m/s)
fast laser induced separation of silicon wafer materials
Keywords Silicon Spannungsrisstrennen Silizium Mittweida Laserinstitut LHM Laser Laser induced cutting High speed Laser Laser processing Laser manufacturing Siliziumwafer Silicon wafer
Computer animation
Computer animation
Computer animation
Computer animation
Computer animation
Computer animation Wafer (electronics)
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