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Spannungsrisstrennen von mono- und polykristallinem Silizium

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No logo availableLaserinstitut Hochschule Mittweida
 Weinhold, Sebastian

Formal Metadata

Title
Spannungsrisstrennen von mono- und polykristallinem Silizium
Alternative Title
fast laser induced separation of silicon wafer materials
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CC Attribution - NonCommercial 3.0 Germany:
You are free to use, adapt and copy, distribute and transmit the work or content in adapted or unchanged form for any legal and non-commercial purpose as long as the work is attributed to the author in the manner specified by the author or licensor.
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Production PlaceLabor 6 - Laserinstitut Hochschule Mittweida

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Abstract
German
German
Spannungsrisstrennen von mono- und polykristallinem Silizium Schritt 1: Anritzen des Siliziumwafers Schritt 2: Trennprozess mit defokussiertem Laserstrahl ausgehend vom Anriss (schmelzfrei, ohne Ablation, Scangeschwindigkeit im Video 1 m/s, ansonsten bis 15 m/s)
English
English
fast laser induced separation of silicon wafer materials
Keywords
German
German
English
English