A simulation of SiC crystal growth on a 14nm times 14 nm supercell, with a stepped 4,05 degree angled surfaces, using the minimum energy atomic deposition (MEAD) method. The substrate is in a 4H configuration and the growth direction is [0001]. Every frame of the video is roughly 200 MEAD steps. 8000 tfMC steps have been applied in between each deposition of a singular C and Si atom. In total 13000 MEAD steps are shown.