The significance of strain engineering in CMOS microelectronics extends across diverse applications, encompassing optoelectronics, sensing, and quantum technologies, and in materials such as heterostructures and perovskites. Experimental analyses (Photoluminescence, Raman, X-Ray Spectroscopy) and simulation platforms enable the prediction and optimization of material processes and device designs. We present a systematic study elucidating how the temperature-dependent distribution of strain can significantly impact the optical and transport performance of semiconductor devices. We focus on strained Ge microdisks, crucial components for developing guidelines for integrated light emitters and explore the role of metal electrodes in quantum confinement buses within CMOS-compatible devices. The research provides valuable in-sights into strain effects on semiconductor devices, laying a foundation for developing and optimizing future microelectronic technologies.