The Czochralski method is widely used for growing single crystals as e.g. silicon crystals. Typically, the thermal field and related ones such as thermal stress is computed for certain stages of the growth. Here we present the successive computations starting from inital state up to nearly the end by combining a perl script and the finite element solver Elmer. The shape of the crystal is given by input and can be taken either from experimental result or by own definition. The numerical computed interface is compared with the one observed by LPS at the crystal grown.